@Article{SilvaJrRossSilvUeda:2014:AdEnMe,
author = "Silva Junior, Ata{\'{\i}}de Ribeiro da and Rossi, Jos{\'e}
Osvaldo and Silva Neto, Lauro Paulo da and Ueda, Mario",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)}",
title = "Adherence Enhancement of Metallic Film on PZT-Type Ceramic Using
Nitrogen Plasma Implantation",
journal = "IEEE Transactions on Plasma Science",
year = "2014",
volume = "42",
number = "10",
pages = "3173 - 3179",
month = "Oct.",
note = "{Setores de Atividade: Pesquisa e desenvolvimento
cient{\'{\i}}fico.}",
keywords = "annealing, ceramics, ion implantation, metallization, plasma
materials processing applications, dielectrics.",
abstract = "Lead zirconate titanate (PZT)-type ceramics used as piezoelectric
sensors have electrodes made by metallic film deposition on the
ceramic substrate, which has low adherence on substrate surface.
During the welding process in electronic component manufacture,
the metallic film releases from surface due to the electrode
delamination caused by the large difference in thermal expansion
gradients between the film and ceramic. Delamination is a serious
problem found in the manufacture of ceramic capacitors since the
metallic electrode is split into several layers, leading to a
component failure as the electrode is not in contact with the
ceramic surface anymore. Therefore, in order to increase the film
adherence on the ceramic it is proposed in this paper to treat the
PZT samples covered with silver metallic films by means of plasma
immersion ion implantation (PIII) technique using a high voltage
100-kV/1-\μs stacked Blumlein pulser. By using this
technique, it is shown that the mechanical adherence of the
electrode metallic silver film is increased, which allows the
welding process of terminals for the piezoelectric device
manufacture without film release failure. Thermal stress relief
treatment known as annealing process was also used in this paper
as an alternative to the PIII method for increasing the film
anchoring on ceramic substrate.",
doi = "10.1109/tps.2014.2314026",
url = "http://dx.doi.org/10.1109/tps.2014.2314026",
issn = "0093-3813",
label = "lattes: 3979447098275675 3 SilvaJrRossNetoUeda:2014:AdEnMe",
language = "en",
targetfile = "06798728.pdf",
urlaccessdate = "28 abr. 2024"
}